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1

Miniaturization of CMOS

Radamson, Henry H., He, Xiaobin, Zhang, Qingzhu, Liu, Jinbiao, Cui, Hushan, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Gao, Jianfeng, Yang, Hong, Gu, Shihai, Zhao, Xuewei, Du, Yong, Y

Journal:

Year:

2019

Language:

english

File:

PDF, 14.36 MB

english, 2019

2

Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing

Akbar, F., Kolahdouz, M., Larimian, Sh., Radfar, B., Radamson, H. H.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2015

Language:

english

File:

PDF, 9.06 MB

english, 2015

3

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson, Henry, Zhang, Yanbo, He, Xiaobin, Cui, Hushan, Li, Junjie, Xiang, Jinjuan, Liu, Jinbiao, Gu, Shihai, Wang, Guilei

Journal:

Applied Sciences

Year:

2017

Language:

english

File:

PDF, 9.27 MB

english, 2017

4

New method to calibrate the pattern dependency of selective epitaxy of SiGe layers

M. Kolahdouz, L. Maresca, M. Ostling, D. Riley, R. Wise, H.H. Radamson

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 401 KB

english, 2009

5

Selective Si Etching Using HCl Vapor

Isheden, C, Hellström, P E, Radamson, H H, Zhang, S-L, Östling, M

Journal:

Physica Scripta

Year:

2004

Language:

english

File:

PDF, 379 KB

english, 2004

6

CMOS Past, Present and Future || Basics of metal–oxide–semiconductor field-effect transistor (MOSFET)

Year:

2018

Language:

english

File:

PDF, 818 KB

english, 2018

7

State of the Art and Future Perspectives in Advanced CMOS Technology

Radamson, Henry H., Zhu, Huilong, Wu, Zhenhua, He, Xiaobin, Lin, Hongxiao, Liu, Jinbiao, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Cui, Hushan, Gao, Jianfeng, Yang, Hong, Du, Yong, X

Journal:

Year:

2020

File:

PDF, 27.29 MB

2020

8

Strain characterization of Ge1−xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping

H.H. Radamson, K.B. Joelsson, W.-X. Ni, J. Birch, J.-E. Sundgren, L. Hultman, G.V. Hansson

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 487 KB

english, 1996

9

Quantum structure based infrared detector research and development within Acreo’s centre of excellence IMAGIC

J.Y. Andersson, L. Höglund, B. Noharet, Q. Wang, P. Ericsson, S. Wissmar, C. Asplund, H. Malm, H. Martijn, M. Hammar, O. Gustafsson, S. Hellström, H. Radamson, P.O. Holtz

Journal:

Infrared Physics & Technology

Year:

2010

Language:

english

File:

PDF, 399 KB

english, 2010

10

The performance improvement evaluation for SiGe-based IR detectors

M. Kolahdouz, A. Afshar Farniya, M. Östling, H.H. Radamson

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 697 KB

english, 2011

11

Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire

T. Aggerstam, S. Lourdudoss, H.H. Radamson, M. Sjödin, P. Lorenzini, D.C. Look

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 258 KB

english, 2006

12

Dopant incorporation in thin strained Si layers implanted with Sb

A.Yu. Azarov, A. Zamani, H.H. Radamson, L. Vines, A.Yu. Kuznetsov, A. Hallén

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 427 KB

english, 2010

13

Liquid phase epitaxial growth of SiC

M Syväjärvi, R Yakimova, H.H Radamson, N.T Son, Q Wahab, I.G Ivanov, E Janzén

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 707 KB

english, 1999

14

High boron incorporation in selective epitaxial growth of SiGe layers

R. Ghandi, M. Kolahdouz, J. Hållstedt, Jun Lu, R. Wise, H. Wejtmans, M. Östling, H. H. Radamson

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2007

Language:

english

File:

PDF, 267 KB

english, 2007

15

3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

Andreas C. Fischer, Lyubov M. Belova, Yuri G. M. Rikers, B. Gunnar Malm, Henry H. Radamson, Mohammadreza Kolahdouz, Kristinn B. Gylfason, Göran Stemme, Frank Niklaus

Journal:

Advanced Functional Materials

Year:

2012

Language:

english

File:

PDF, 1.22 MB

english, 2012

16

Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique

Kolahdouz, M., Maresca, L., Ghandi, R., Khatibi, A., Radamson, H. H.

Journal:

Journal of The Electrochemical Society

Year:

2011

Language:

english

File:

PDF, 2.46 MB

english, 2011

17

Substrate engineering for Ni-assisted growth of carbon nano-tubes

Z. Kolahdouz, M. Kolahdouz, H. Ghanbari, S. Mohajerzadeh, S. Naureen, H.H. Radamson

Journal:

Materials Science and Engineering: B

Year:

2012

Language:

english

File:

PDF, 1.11 MB

english, 2012

18

Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane

Kolahdouz, M., Salemi, A., Moeen, M., Östling, M., Radamson, H. H.

Journal:

Journal of The Electrochemical Society

Year:

2012

Language:

english

File:

PDF, 466 KB

english, 2012

19

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Ellison, A., Radamson, H., Tuominen, M., Milita, S., Hallin, C., Henry, A., Kordina, O., Tuomi, T., Yakimova, R., Madar, R., Janzén, E.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 774 KB

english, 1997

20

[IEEE 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Stockholm, Sweden (2014.04.7-2014.04.9)] 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Fabrication of strained Ge on insulator via room temperature wafer bonding

Asadollahi, A., Radamson, H., Zabel, T., Hellstrom, P.-E, Ostling, M.

Year:

2014

Language:

english

File:

PDF, 873 KB

english, 2014

21

Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology

Wang, Guilei, Abedin, Ahmad, Moeen, Mahdi, Kolahdouz, Mohammadreza, Luo, Jun, Guo, Yiluan, Chen, Tao, Yin, Huaxiang, Zhu, Huilong, Li, Junfeng, Zhao, Chao, Radamson, Henry H.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.35 MB

english, 2015

22

Selective epitaxy growth of Si1−xGexlayers for MOSFETs and FinFETs

Radamson, Henry H., Kolahdouz, Mohammadreza

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2015

Language:

english

File:

PDF, 3.07 MB

english, 2015

23

Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts

Isheden, Christian, Seger, Johan, Radamson, Henry H., Zhang, Shi-Li, Östling, Mikael

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 281 KB

english, 2002

24

Thermoelectric energy harvesting using array of vertically aligned Al-doped ZnO nanorods

Norouzi, M., Kolahdouz, M., Ebrahimi, P., Ganjian, M., Soleimanzadeh, R., Narimani, K., Radamson, H.

Journal:

Thin Solid Films

Year:

2016

Language:

english

File:

PDF, 1007 KB

english, 2016

25

Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs

Wang, G., Luo, J., Qin, C., Cui, H., Liu, J., Jia, K., Li, J., Yang, T., Li, J., Yin, H., Zhao, C., Ye, T., Yang, P., Jayakumar, G., Radamson, H. H.

Journal:

ECS Transactions

Year:

2016

Language:

english

File:

PDF, 779 KB

english, 2016

26

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Wang, Guilei, Luo, Jun, Qin, Changliang, Liang, Renrong, Xu, Yefeng, Liu, Jinbiao, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Xu, Jun, Zhao, Chao, Radamson, Henry H., Ye, Tianchun

Journal:

Nanoscale Research Letters

Year:

2017

Language:

english

File:

PDF, 2.37 MB

english, 2017

27

Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs

Radamson, Henry H., Luo, Jun, Qin, Changliang, Yin, Huaxiang, Zhu, Huilong, Zhao, Chao, Wang, Guilei

Journal:

International Journal of High Speed Electronics and Systems

Year:

2017

Language:

english

File:

PDF, 1.24 MB

english, 2017

28

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Li, Junjie, Du, Anyan, Kong, Zhenzhen, Yin, Xiaogen, Li, Chen, Zhao, Liheng, Li, Yangyang, Jia, Kunpeng, Li, Ben, Radamson, Henry H.

Journal:

Year:

2020

File:

PDF, 7.47 MB

2020

29

Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures

M.R. Sardela Jr., H.H. Radamson, J.O. Ekberg, J.-E. Sundgren, G.V. Hansson

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 1.00 MB

english, 1994

30

A silicon molecular beam epitaxy system dedicated to device-oriented material research

W.-X. Ni, J.O. Ekberg, K.B. Joelsson, H.H. Radamson, A. Henry, G.-D. Shen, G.V. Hansson

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 786 KB

english, 1995

31

Characterization of highly boron-doped Si, Si1 − xGex and Ge layers by high-resolution transmission electron microscopy

H.H. Radamson, K.B. Joelsson, W.-X. Ni, L. Hultman, G.V. Hansson

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 304 KB

english, 1995

32

The role of low temperature growth defects for the stability of strained Si/Si1−xGex heterostructures

H.H. Radamson, W.-X. Ni, G.V. Hansson

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 260 KB

english, 1996

33

The effect of C on emitter–base design for a single-polysilicon SiGe:C HBT with an IDP emitter

Erik Haralson, Erdal Suvar, Gunnar Malm, Henry Radamson, Yong-Bin Wang, Mikael Östling

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 305 KB

english, 2004

34

NiSi integration in a non-selective base SiGeC HBT process

Erik Haralson, Erdal Suvar, B. Gunnar Malm, Henry Radamson, Yong-Bin Wang, Mikael Östling

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 368 KB

english, 2005

35

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

J. Hållstedt, A. Parent, M. Östling, H.H. Radamson

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 262 KB

english, 2005

36

Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications

H.H. Radamson, J. Hållstedt, E. Suvar, C. Menon, M. Östling

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 323 KB

english, 2005

37

Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films

J.S. Christensen, A.Yu. Kuznetsov, A.E. Gunnaes, B.G. Svensson, H.H. Radamson

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 266 KB

english, 2006

38

Vacancy-impurity pairs in n-type studied by positron spectroscopy

M. Rummukainen, J. Slotte, K. Saarinen, H.H. Radamson, J. Hållstedt, A.Yu. Kuznetsov

Journal:

Physica B: Condensed Matter

Year:

2006

Language:

english

File:

PDF, 113 KB

english, 2006

39

Growth of high quality epitaxial Si1−x−yGexCy layers by using chemical vapor deposition

J. Hållstedt, E. Suvar, P.O.Å. Persson, L. Hultman, Y.-B. Wang, H.H. Radamson

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 141 KB

english, 2004

40

Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

E Suvar, E Haralson, H.H Radamson, Y.-B Wang, J.V Grahn, B.G Malm, M Östling

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 149 KB

english, 2004

41

Mechanisms of diffusion-enhanced thermal stability of Si/Si1−xGex/Si heterostructures grown by chemical vapor deposition

A. Bentzen, C. Menon, H.H. Radamson

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 291 KB

english, 2004

42

A Si/SiGe MOSFET utilizing low-temperature wafer bonding

S. Koliopoulou, P. Dimitrakis, D. Goustouridis, S. Chatzandroulis, P. Normand, D. Tsoukalas, H. Radamson

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 242 KB

english, 2005

43

A robust spacer gate process for deca-nanometer high-frequency MOSFETs

J. Hållstedt, P.-E. Hellström, Z. Zhang, B.G. Malm, J. Edholm, J. Lu, S.-L. Zhang, H.H. Radamson, M. Östling

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 582 KB

english, 2006

44

PECVD-grown carbon nanotubes on silicon substrates with a nickel-seeded tip-growth structure

Y. Abdi, J. Koohsorkhi, J. Derakhshandeh, S. Mohajerzadeh, H. Hoseinzadegan, M.D. Robertson, J.C. Bennett, X. Wu, H. Radamson

Journal:

Materials Science and Engineering: C

Year:

2006

Language:

english

File:

PDF, 681 KB

english, 2006

45

pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions

Christian Isheden, Per-Erik Hellström, Martin von Haartman, Henry H. Radamson, Mikael Östling

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 229 KB

english, 2005

46

SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays

J.Y. Andersson, P. Ericsson, H.H. Radamson, S.G.E. Wissmar, M. Kolahdouz

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 897 KB

english, 2011

47

Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1−xGex and Si1−yCy buffer layers

Joo-Hyung Kim, Alexander M. Grishin, Henry H. Radamson

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 539 KB

english, 2006

48

Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)

H.H. Radamson, M. Kolahdouz, R. Ghandi, J. Hållstedt

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 316 KB

english, 2008

49

Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs

J. Hållstedt, P.-E. Hellström, H.H. Radamson

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 318 KB

english, 2008

50

Defect density in non-selective and selective Si/SiGe structures

C. Menon, A. Bentzen, G. Landgren, H.H. Radamson

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 101 KB

english, 2002

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